IGBT ratings and safe operating area
Maximum collector-emitter voltage (VCES):
This rating should not be exceeded even on instantaneous basis in order to prevent avalanche break down of the drain-body p-n junction. This is specified at a given negative gate emitter voltage or a specified resistance connected between the gate and the emitter.
This is the maximum current the IGBT can handle on a continuous basis during ON condition. It is specified at a given case temperature with derating curves provided for other case temperatures.
This is the maximum collector current that can flow for a specified pulse duration. This current is limited by specifying a maximum gate-emitter voltage.
This is the maximum allowable magnitude of the gate-emitter voltage (of both positive and negative polarity) in order to
This is the leakage collector current during off state of the device at a given junction temperature. This is usually specified at VgE = 0V and vCE = VCES.
Gate-emitter leakage current (IGES):
Collector emitter saturation voltage (VCE(sat)):
This is specified at a given junction temperature, gate-emitter voltage and collector current. For more detailed data the output characteristics of the device for different vgE and expanded near the saturation zone is also provided.
It is specified at a low collector emitter voltage and collector current.
This is again specified at a low value of vCE. For more detailed data the transfer characteristics of the device (ic vs vgE) is also provided.
These are, gate-emitter, collector-emitter and gate-drain capacitances of the device respectively, specified at a given collector-emitter voltage. Variation of these parameters as functions of vCE are also supplied.
These times are specified for inductive load switching as functions of gate charging resistance and collector current. In addition turn on and turn off energy losses per switching operation are also specified.
This is the maximum allowable power lass in the device (both switching and conduction) on a continuous basis at a given case temperature. Derating curve at other temperatures are also specified.
Safe operating area of an IGBT:
- The IGBT has robust SOA both during turn on and turn off. On the left side it is restricted by the forward voltage drop characteristics. Up to maximum continuous collector current this voltage remains reasonably constant at a low value. However, at ICM this voltage starts increasing as the IGBT starts entering active region. On the top the FBSOA is restricted by ICM.
- The other two limits are formed by the maximum power dissipation limit and the maximum forward voltage limit. Like other devices the maximum power dissipation limit increases with reduction in the on pulse width.
- The RBSOA for low values of dvCE/dt is rectangular. However, for increased dvCE/dtthe upper-right hand corner is progressively cut out. The reason for this restriction on the RBSOA is to avoid dynamic latch up. The device user can easily control dvCE/dtby proper choice of Vgg and the gate drive resistance.