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    • Earthquake Resistant Desigm Of Building

  • First Year-Engineering Syllabus
    • Chemistry
    • Maths-1
    • Maths-2
    • Basic electrical - First Year
    • Basic Electronics
    • Elements Of Civil Engineering
    • Elements of Mechanical Engineering
    • Environmental Engineering
    • Computer concepts and c programming
    • Physics-I
    • Physics-II
    • Basic Manufacturing Process
    • Human Values and Professional Ethics
    • Professional Communication

Fundamentals of Electronics Devices
  • Online Study
  • Electronics and Communication Engineering
  • Fundamentals of Electronics Devices

Some special devices
  • Photodiode
  • P-N-P-N diode
  • Semiconductor Controlled Rectifier
  • Light Emitting Diode
  • Tunnel Diode
  • TRIAC
  • DIAC
  • Insulated Gate Bipolar Transistor
  • GUNN diode- Basic Principle
  • GUNN diode-The Transferred Electron Mechanism
  • PNPN diode- Forward Blocking & conducting mode
  • Solar Cell- Working Principle
  • Solar Cell- I-V Characterstics
  • Photodetectors
  • Photodiode Equations
  • PIN PHOTODIODE
  • Avlanche Photodiode
  • Light Emitting Materials
  • IMPATT diode
  • IMPATT diode operation
  • Semiconductor lasers
  • Semiconductor lasers- Under forward biased
  • Heterojunction Lasers Operation
  • Photodiode: current and voltage in an illuminated Junction
  • Gain, Bandwidth, and Signal-to-Noise Ratio of Photodetectors
  • Optical Fiber
  • Emission Spectra for p-n Junction Lasers
  • Heterojunction Lasers
  • Materials for Semiconductor Lasers
  • Formation and Drift of Space Charge Domains
  • The Two-Transistor Analogy
  • Triggering Mechanisms of PNPN diode
  • Turning Off the SCR
Junction Properties
  • EQUILIBRIUM CONDITIONS: The Contact Potential
  • Equilibrium Fermi Levels
  • Space Charge at a Junction
  • Steady state condition: qualitative description of current flow at a junction
  • Carrier Injection
  • Reverse Bias
  • Reverse bias breakdown
  • Zener Breakdown
  • Avalanche Breakdown
  • Rectifiers
  • The Breakdown Diode
  • Transient and a-c conditions: time variation of stored charge
  • Reverse Recovery Transient
  • Switching Diodes
  • Capacitance of p-n Junctions: depletion capacitance
  • Diffusion capacitance
  • The Varactor Diode
  • Effects of Contact Potential on Carrier Injection
  • Recombination and Generation in the Transition Region
  • Ohmic Losses
  • Graded Junctions
  • Metal semiconductor junctions: schottky barriers
  • Rectifying Contacts
  • Ohmic Contacts
  • Typical Schottky Barriers
  • Hetrojunctions
  • The Basic Semiconductor Laser
Excess Carriers in Semiconductors
  • OPTICAL ABSORPTION
  • OPTICAL ABSORPTION EXPERIMENT
  • LUMINESCENCE
  • Photoluminescence
  • Carrier Lifetime And Photoconductivity: direct recombination
  • Indirect Recombination: Trapping
  • Steady State Carrier Generation: Quasi-Fermi Levels
  • Photoconductive Devices
  • DIFFUSION OF CARRIERS: Diffusion Processes
  • Diffusion and Drift of Carriers: Built-in Fields
  • The Einstein Relation
  • The Continuity Equation
  • Steady State Carrier Injection and Diffusion Length
  • The Haynes-Shockley Experiment
  • Gaussian distribution
  • Gradients in the Quasi-Fermi Levels
Crystal Properties and charge Carriers in Semiconductors
  • SEMICONDUCTOR MATERIALS
  • CRYSTAL LATTICES: Periodic Structures
  • Cubic Lattices Structures
  • Planes and Directions: Miller indices
  • The Diamond Lattice
  • Bonding Forces in Solids
  • Energy Bands
  • Linear combinations of the individual atomic orbitals (LCAO)
  • Metals, Semiconductors, and Insulators
  • Direct and Indirect Semiconductors
  • Variation of Energy Bands with Alloy Composition
  • Charge Carriers In Semiconductors: Electrons and Holes
  • Electrons & holes: (E, k) band diagram
  • Effective Mass of electron & holes
  • Electron & holes: realstic band structure in semiconductor.
  • Intrinsic Material
  • Extrinsic Material
  • Electrons and Holes in Quantum Wells
  • Carrier Concentration: The fermi level
  • The Fermi Dirac distribution
  • Electron and Hole Concentrations at Equilibrium
  • Temperature Dependence of Carrier Concentrations
  • Compensation and Space Charge Neutrality
  • Drift of Carriers in electric and magnetic fields: conductivity and mobility
  • Drift and Resistance of the charge carrier
  • Effects of Temperature and Doping on Mobility
  • High-Field Effects
  • The Hall Effect
  • The Photoelectric Effect
  • Atomic Spectra
  • Probability and the Uncertainty Principle
  • The Schrodinger Wave Equation
  • Tunneling
Transistors
  • Metal semiconductor field effect transistors (MESFET)
  • MESFET- The High Electron Mobility Transistor (HEMT)
  • The Metal Insulator Semiconductor FET (MISFET)
  • MISFET under different operating condition
  • The Ideal MOS Capacitor
  • MOSFET: Effects of Real Surfaces
  • MOSFET: Interface Charge
  • MOSFET: Threshold Voltage
  • MOS Capacitance Voltage Analysis
  • MOSFET: Time-Dependent Capacitance Measurements
  • Current-Voltage Characteristics of MOS Gate Oxides
  • The MOSFET
  • MOSFET: Output Characteristics
  • Conductance and Transconductance of the MOSFET
  • MOSFET: Transfer Characteristics
  • MOSFET: Mobility Models
  • MOSFET: Effective transverse field
  • Short Channel MOSFET l-V Characteristics
  • MOSFET: Control of Threshold Voltage
  • MOSFET: Threshold Adjustment by Ion Implantation
  • MOSFET: Substrate Bias Effects
  • MOSFET: Subthreshold Characteristics
  • Equivalent Circuit for the MOSFET
  • MOSFET Scaling and Short channel effect
  • MOSFET: Hot carrier effects
  • MOSFET: Drain-Induced Barrier Lowering
  • Short Channel Effect and Narrow Width Effect of MOSFET
  • Gate-Induced Drain Leakage in MOSFET
  • FUNDAMENTALS OF BJT OPERATION
  • BJT: Summary of hole and elecfron flow in a transistor
  • FUNDAMENTALS OF BJT OPERATION: PN junction
  • AMPLIFICATION WITH BJTS