Fundamentals of Electronics Devices
Some special devices
Junction Properties
Excess Carriers in Semiconductors
Crystal Properties and charge Carriers in Semiconductors
Transistors
- Photodiode
- P-N-P-N diode
- Semiconductor Controlled Rectifier
- Light Emitting Diode
- Tunnel Diode
- TRIAC
- DIAC
- Insulated Gate Bipolar Transistor
- GUNN diode- Basic Principle
- GUNN diode-The Transferred Electron Mechanism
- PNPN diode- Forward Blocking & conducting mode
- Solar Cell- Working Principle
- Solar Cell- I-V Characterstics
- Photodetectors
- Photodiode Equations
- PIN PHOTODIODE
- Avlanche Photodiode
- Light Emitting Materials
- IMPATT diode
- IMPATT diode operation
- Semiconductor lasers
- Semiconductor lasers- Under forward biased
- Heterojunction Lasers Operation
- Photodiode: current and voltage in an illuminated Junction
- Gain, Bandwidth, and Signal-to-Noise Ratio of Photodetectors
- Optical Fiber
- Emission Spectra for p-n Junction Lasers
- Heterojunction Lasers
- Materials for Semiconductor Lasers
- Formation and Drift of Space Charge Domains
- The Two-Transistor Analogy
- Triggering Mechanisms of PNPN diode
- Turning Off the SCR
- EQUILIBRIUM CONDITIONS: The Contact Potential
- Equilibrium Fermi Levels
- Space Charge at a Junction
- Steady state condition: qualitative description of current flow at a junction
- Carrier Injection
- Reverse Bias
- Reverse bias breakdown
- Zener Breakdown
- Avalanche Breakdown
- Rectifiers
- The Breakdown Diode
- Transient and a-c conditions: time variation of stored charge
- Reverse Recovery Transient
- Switching Diodes
- Capacitance of p-n Junctions: depletion capacitance
- Diffusion capacitance
- The Varactor Diode
- Effects of Contact Potential on Carrier Injection
- Recombination and Generation in the Transition Region
- Ohmic Losses
- Graded Junctions
- Metal semiconductor junctions: schottky barriers
- Rectifying Contacts
- Ohmic Contacts
- Typical Schottky Barriers
- Hetrojunctions
- The Basic Semiconductor Laser
- OPTICAL ABSORPTION
- OPTICAL ABSORPTION EXPERIMENT
- LUMINESCENCE
- Photoluminescence
- Carrier Lifetime And Photoconductivity: direct recombination
- Indirect Recombination: Trapping
- Steady State Carrier Generation: Quasi-Fermi Levels
- Photoconductive Devices
- DIFFUSION OF CARRIERS: Diffusion Processes
- Diffusion and Drift of Carriers: Built-in Fields
- The Einstein Relation
- The Continuity Equation
- Steady State Carrier Injection and Diffusion Length
- The Haynes-Shockley Experiment
- Gaussian distribution
- Gradients in the Quasi-Fermi Levels
- SEMICONDUCTOR MATERIALS
- CRYSTAL LATTICES: Periodic Structures
- Cubic Lattices Structures
- Planes and Directions: Miller indices
- The Diamond Lattice
- Bonding Forces in Solids
- Energy Bands
- Linear combinations of the individual atomic orbitals (LCAO)
- Metals, Semiconductors, and Insulators
- Direct and Indirect Semiconductors
- Variation of Energy Bands with Alloy Composition
- Charge Carriers In Semiconductors: Electrons and Holes
- Electrons & holes: (E, k) band diagram
- Effective Mass of electron & holes
- Electron & holes: realstic band structure in semiconductor.
- Intrinsic Material
- Extrinsic Material
- Electrons and Holes in Quantum Wells
- Carrier Concentration: The fermi level
- The Fermi Dirac distribution
- Electron and Hole Concentrations at Equilibrium
- Temperature Dependence of Carrier Concentrations
- Compensation and Space Charge Neutrality
- Drift of Carriers in electric and magnetic fields: conductivity and mobility
- Drift and Resistance of the charge carrier
- Effects of Temperature and Doping on Mobility
- High-Field Effects
- The Hall Effect
- The Photoelectric Effect
- Atomic Spectra
- Probability and the Uncertainty Principle
- The Schrodinger Wave Equation
- Tunneling
- Metal semiconductor field effect transistors (MESFET)
- MESFET- The High Electron Mobility Transistor (HEMT)
- The Metal Insulator Semiconductor FET (MISFET)
- MISFET under different operating condition
- The Ideal MOS Capacitor
- MOSFET: Effects of Real Surfaces
- MOSFET: Interface Charge
- MOSFET: Threshold Voltage
- MOS Capacitance Voltage Analysis
- MOSFET: Time-Dependent Capacitance Measurements
- Current-Voltage Characteristics of MOS Gate Oxides
- The MOSFET
- MOSFET: Output Characteristics
- Conductance and Transconductance of the MOSFET
- MOSFET: Transfer Characteristics
- MOSFET: Mobility Models
- MOSFET: Effective transverse field
- Short Channel MOSFET l-V Characteristics
- MOSFET: Control of Threshold Voltage
- MOSFET: Threshold Adjustment by Ion Implantation
- MOSFET: Substrate Bias Effects
- MOSFET: Subthreshold Characteristics
- Equivalent Circuit for the MOSFET
- MOSFET Scaling and Short channel effect
- MOSFET: Hot carrier effects
- MOSFET: Drain-Induced Barrier Lowering
- Short Channel Effect and Narrow Width Effect of MOSFET
- Gate-Induced Drain Leakage in MOSFET
- FUNDAMENTALS OF BJT OPERATION
- BJT: Summary of hole and elecfron flow in a transistor
- FUNDAMENTALS OF BJT OPERATION: PN junction
- AMPLIFICATION WITH BJTS