Advanced Semiconductor Devices
Review of Fundamentals of Semiconductors
Junctions and Interfaces
Majority Carrier Diodes
Microwave Diodes
Metal Semiconductor Field Effect Transistors
- Semiconductor Materials
- Crystal Lattice
- Cubic Lattices
- Planes and Directions
- The Diamond Lattice
- Bulk Crystal Growth
- Growth of Single Crystal Ingots
- Wafers
- Epitaxial growth
- Vapor-phase epitaxy
- Molecular beam epitaxy
- Charge Carriers in Semiconductors
- Effective Mass
- Intrinsic Material
- Extrinsic Material
- Electrons and Holes in Quantum Wells
- The Fermi Level
- Compensation and Space Charge Neutrality
- Drift and Resistance
- Optical absorption
- Photoluminescence
- Electroluminescence
- Carrier Lifetime and Photoconductivity
- Direct Recombination of Electrons and Holes
- Indirect Recombination; Trapping
- Steady State Carrier Generation; Quasi-Fermi Levels
- Photoconductive Devices
- Diffusion Processes
- Diffusion and Drift of Carriers: Built-in Fields
- Diffusion and Recombination; The Continuity Equation
- Steady State Carrier Injection: Diffusion Length
- The Haynes-Shockley Experiment
- Gradients in the Quasi-Fermi Levels
- Temperature Dependence of Carrier Concentrations
- Effects of Temperature and Doping on Mobility
- High-Field Effects
- The Hall Effect
- Fabrication of p-n Junctions: Thermal oxidation
- Diffusion of P-N junction
- Rapid Thermal Processing
- Ion Implantation
- Chemical Vapor Deposition (CVD)
- Photolithography
- Etching
- Metallization
- Equilibrium Conditions
- Equilibrium Fermi Levels
- Space Charge at a Junction
- Forward- and Reverse-Biased Junctions
- Carrier Injection
- Reverse Bias
- Reverse-Bias Breakdown
- Zener Breakdown
- Avalanche Breakdown
- Rectifiers
- The Breakdown Diode
- Transient and A-C Conditions
- Reverse Recovery Transient
- The Ideal Diode Model
- Effects of Contact Potential on Carrier Injection
- Switching Diodes
- Capacitance of p-n junctions
- Recombination and Generation in the Transition Region
- Ohmic Losses
- Graded Junctions
- Metal semiconductor junctions: schottky barriers
- Current Transport Processes
- Thermionic-Emission Theory
- Diffusion Theory
- Thermionic-Emission-Diffusion Theory
- Rectifying Contacts
- Tunneling Current
- Minority-Carrier Injection
- MIS Tunnel Diode
- Measurement of Barrier Height
- Activation-Energy Measurement
- Photoelectric Measurement
- Ohmic Contacts
- Typical Schottky Barriers
- Heterojunctions
- Tunnel Diodes
- Construction of Tunnel Diodes
- The Backward Diode
- MIM tunnel diode
- Structure of resonant-tunneling diode
- I-V characteristics of resonant-tunneling diode
- Photodiodes
- The Varactor Diode
- Current and Voltage in an Illuminated Junction
- Solar Cell- Working Principle
- Solar Cell- I-V Characterstics
- Photodetectors
- Gain, Bandwidth, and Signal-to-Noise Ratio of photodetector
- Light Emitting Diodes
- Light Emitting Materials
- Fiber-Optic Communications
- Semiconductor lasers
- Population Inversion at a Junction
- Emission Spectra for p-n Junction Lasers
- The Basic Semiconductor Laser
- Heterojunction Lasers
- Materials for Semiconductor Lasers
- The Gunn Diode
- The Transferred-Electron Mechanism
- Formation and Drift of Space Charge Domains
- The IMPATT Diode Structure
- The IMPATT diode operation
- Static Characteristics
- Breakdown Voltage
- Avalanche Region and Drift Region
- Temperature and Space-Charge Effects
- Dynamic Characteristics
- Large-Signal Operation
- Power-Frequency Limitation-Electronic
- Limitation on Efficiency
- Power-Frequency Limitation-Thermal
- Noise Behavior
- Device Design and Performance
- The BARITT Diode
- Small-Signal Behaviors
- Large-Signal Performance
- TRAPATT Diode
- The p-i-n Diode
- Breakdown Voltage Capacitance, Q Factor
- MOSFET: Introduction
- Field-Effect Transistors: Family Tree
- Versions of Field-Effect Transistors
- Basic Device Characteristics of MOSFET
- Inversion Charge in Channel
- Current-Voltage Characteristics
- Velocity-Field Relationship
- Field-Dependent Mobility
- Threshold Voltage
- Subthreshold Region
- Mobility Behavior
- Temperature Dependence
- Nonuniform Doping and Buried-Channel Device
- High-Low Profile
- Buried-Channel Device
- Device Scaling
- Charge Sharing from Source/Drain
- Drain-Induced Barrier Lowering (DIBL)
- Multiplication and Oxide Reliability
- MOSFET Structures
- MOSFET: Source/Drain Design
- Schottky-Barrier Source/Drain
- SOI and Thin-Film Transistor (TFT)
- Power MOSFETs
- Circuit Applications
- Basic Circuit Blocks
- Nonvolatile Memory devices
- Charge-Trapping Devices
- Single-Electron Transistor
- MESFET: I-V Characteristics
- Channel-Charge Distribution
- Constant Mobility
- Velocity-Field Relationship
- Field-Dependent Mobility of MESFET
- Velocity Saturation of MESFET
- Dipole-Layer Formation
- Breakdown in MESFET
- Arbitrary Doping Profile
- Enhancement-Mode Devices
- Small-Signal Equivalent Circuit
- Cut off Frequency
- Maximum Frequency of Oscillation
- Power-Frequency Limitations
- Noise Behavior
- MESFET Device Structures