A. duality
- The “Superposition theorem” is essentially based on the concept of
B. linearity
C. reciprocity
D. non-linearity
ANSWER: B
ANSWER: C
- Cells are connected in parallel in order to
- increase the voltage available.
- reduce cost of wiring.
- increase the current available.
- reduce the time required to fully charge them after use
ANSWER: B
- The power factor of a purely resistive circuit is
- zero.
- unity.
- lagging.
- leading.
ANSWER: C
- The power taken by a 3-phase load is given by the expression
- 3VL IL cos f .
- 3 VL IL sin f .
- 3 VL IL cos f .
- 3 VL IL sin f .
ANSWER: A
- Which of the following generating stations has the minimum running cost
- hydro-electric station.
- nuclear power station.
- thermal power station.
- diesel power plant.
ANSWER: B
- Which of the following motors has a high starting torque?
- ac series motor.
- dc series motor.
- induction motor.
- synchronous motor.
ANSWER: C
- The effect of increasing the length of the air gap in an induction motor will be to increase
- power factor.
- speed.
- magnetising current.
- air-gap flux.
ANSWER: A
- The combined resistance of two equal resistors connected in parallel is equal to
- One half the resistance of one resistor.
- Twice the resistance of one resistor.
- Four times the resistance of one resistor.
- One fourth the resistance of one resistor.
ANSWER: D
- Superposition theorem can be applicable only to circuits having _________ elements.
- Non- linear
- Passive
- Resistive
- Linear bilateral
ANSWER: C
- The Q- factor of a coil is given by
- Its power factor cosF .
- Ratio of max. energy stored & energy dissipated per cycle..
- Reciprocal of its power factor.
- Ratio R/Z.
ANSWER: C
- The efficiency of a transformer is maximum when
- It runs at half full load.
- It runs at full load.
- Its Cu loss equals iron loss.
- It runs overload.
ANSWER: D
- The unit of inductance is
- Ohm.
- Mho.
- Farad.
- Henry.
ANSWER: B
- Thevenin’s equivalent circuit consists of _________.
- Series combination of RTh, ETh and RL.
- Series combination of RTh, ETh.
- Parallel combination of RTh, ETh.
- Parallel combination of RTh, ETh and RL.
ANSWER: B
- An atom's atomic number is determined by the number of:
- neutrons minus protons
- protons
- electrons
- neutrons
be_________.
- In an R – L –C circuit, the phase of the current with respect to the circuit voltage will
ANSWER: D
- Leading.
- Same.
- Lagging.
- Depends upon the value of Land C.
ANSWER: B
- The negative and positive charge symbols are assigned (in that order) to the:
- proton and electron
- electron and proton
- atom and nucleus
- electron and element
ANSWER: C
- A voltmeter is used:
- to measure current
- in series with the circuit
- in parallel with the circuit
- to measure coulombs
ANSWER: B
- Q factor of an inductive coil is given by
- R/Z
- 2πfr/R
- 2πfL/R
- lr/l
kW and 3.5 kW respectively and the latter reading has been obtained after reversing the
- If the readings of the two wattmeters in the 2-wattmeter method of power measurement are 4.5
current coil of the wattmeter. What will be the total power in kW?ANSWER: A
- 1
- 3.5
- 4.5
- 8
ANSWER: D
- If the current in a circuit equals 0 A, it is likely that the
- voltage is too high
- resistance is too low
- circuit has a short
- circuit is open
ANSWER: D
- What are the unit and symbol for current
- Ampere, A
- Coulomb, I
- Ampere, Q
- Ampere, I
ANSWER: B
- A network that does not have either voltage or current sources is called
- Active network.
- Passive network.
- Resistive network.
- Dummy network.
ANSWER: B
- The Power- factor at resonance in R-L-C circuit is
- Zero.
- Unity.
- 0.5 lagging.
- 0.5 leading.
in ohms is
- Resistance of a wire is r ohms. The wire is stretched to double its length, then its resistance
ANSWER: B
- r/2
- 4r
- 2r
- r/4
ANSWER: B
- Which of the following will remain the same in all parts of a series circuit?
- Voltage
- Current
- Power
- Resistance
ANSWER: B
- Which one of the following statements is not true?
- Capacitance is a measure of a capacitor’s capability to store charge.
- A capacitor offers high impedance to ac but very low impedance to dc.
- A capacitor is also used as bypass capacitor.
- Capacitors are used to couple alternating voltages from one circuit to another and at the same time to block dc voltage from reaching the next circuit.
ANSWER: D
- In a Zener diode large reverse current is due to
- collision.
- presence of impurities.
- rupture of bonds
- lower resistance in reverse biased region.
ANSWER: D
- JFET has main drawback of
- having low input impedance.
- having high output impedance.
- being noisy.
- small gain-bandwidth product
ANSWER: B
- Which voltage source converts chemical energy to electrical energy?
- Electrical generator
- Battery
- Solar cell
- Electronic power supply
ANSWER: B
- One coulomb passing a point in one second is one:
- ampere
- volt
- ohm
- charge
ANSWER: C
- How many valence shell electrons are there in semiconductor atoms?
- 6
- 8
- 4
- 2
ANSWER: B
- For thermionic emission
- a material with high work function is preferable.
- a material with low work function is preferable.
- the work function of the material has no importance.
- None of these is true.
ANSWER: B
- Which unit of charge contains 6.25 × 1018 electrons?
- An ampere
- A coulomb
- A volt
- A joule
ANSWER: D
- A switch is a device that:
- short circuits complex circuits
- holds a fuse
- has double poles
- opens or completes a current path
ANSWER: B
- The CE configuration amplifier circuits are preferred over CB configuration amplifier circuits because they have
- Lower amplification factor.
- Larger amplification factor.
- high input resistance and low output resistance.
- none of these.
ANSWER: B
- Which electronics material opposes the movement of free electrons?
- Conductor
- Insulator
- Semiconductor
- Element
ANSWER: A
- Current is considered as the movement of:
- electrons
- protons
- charge
- nuclei
ANSWER: D
- The colour band sequence of a resistor is grey, Blue, gold, and gold. The range in which its value must lie so as to satisfy the tolerance specified is between
- 7.5Ω and 8.5Ω
- 3.12KΩ and 5.22KΩ
- 10.3KΩ and 12.31KΩ
- 8.17Ω and 9.03Ω
ANSWER: B
- In an N-type semiconductor, the concentration of minority carriers mainly depends upon
- the doping technique.
- the number of donor atoms.
- the temperature of the
- the quality of the intrinsic material,Ge or Si.
ANSWER: B
- A basic electric circuit is made up of what components?
- A load, a resistor, and a conductive path for current
- A voltage source, a load, and a conductive path for current
- A voltage source, a conductive path for current, and a battery
- A conductive path for current, a battery, and a copper wire
ANSWER: B
- A short circuit will have:
- a small current flow
- a large current flow
- no current flow
- some current flow
ANSWER: B
- Which of the following statements is true?
- Unlike charges repel and like charges attract.
- Like charges repel and unlike charges attract.
- Unlike charges attract and like charges attract.
- Like charges repel and unlike charges repel.
ANSWER: B
- When forward bias is applied to a junction diode, it
- increases the potential barrier.
- decreases the potential barrier.
- reduces the majority-carrier current to zero.
- reduces the minority-carrier current to zero.
ANSWER: D
- A UJT contains
- four pn junctions
- three pn junctions
- two pn junctions
- one pn junction
ANSWER: D
- Which of the following components are all active components?
- A resistor and a capacitor.
- A microphone, a LCD and a Thyratron.
- An electric bulb, a transformer and a varactor diode.
- An SCR, a vacuum diode and an LED.
ANSWER: B
- Doping materials are called impurities because they
- Decrease the number of charge carriers.
- Change the chemical properties of semiconductors.
- Make semiconductors less than 100 percent pure.
- Alter the crystal structures of the pure semiconductors
ANSWER: D
- Avalanche breakdown is primarily dependent on the phenomenon of
- Collision
- Doping
- Ionisation
- Recombination
ANSWER: C
- The main reason why electrons can tunnel through a P-N junction is that
- They have high energy.
- Barrier potential is very low.
- Depletion layer is extremely thin.
- Impurity level is low.
to be
- If a change in base current does not change the collector current, the transistor amplifier is said
ANSWER: A
- Saturated.
- Cut-off.
- Critical.
- Complemented.
ANSWER: A
- The extremely high input impedance of a MOSFET is primarily due to the
- Absence of its channel.
- Negative gate-source voltage.
- Depletion of current carriers.
- Extremely small leakage current of its gate capacitor.
ANSWER: A
- After firing an SCR, the gating pulse is removed. The current in the SCR will
- Remains the same.
- Immediately fall to zero.
- Rise up.
- Rise a little and then fall to zero.
ANSWER: C
- A device whose characteristics are very close to that of an ideal voltage source is
- a vaccum diode.
- a DIAC.
- a zener diode.
- a FET.
ANSWER: C
- The forbidden energy gap in semiconductors
- lies just below the valance band
- lies just above the conduction band
- lies between the valence band and the conduction band
- is the same as the valence band
ANSWER: B
- The barrier potential for a Ge PN junction is
- 0.6V.
- 0.3V.
- 0.1V.
- 0.5V.
is said to operate in
- In a BJT, if the emitter junction is reverse-biased and the collector junction is reverse-biased, it
ANSWER: C
- in active region
- in saturation region
- in cut-off region
- none of the above
ANSWER: B
- The resistance between bases of a UJT is typically in the range of
- 2 to 3 K Ω
- 5 to 10 K Ω
- 15 to 20 K Ω
- 18 to 20 K Ω
C. The carrier concentration decreases, but the mobility of carriers increases.
- With increasing temperature, the resistivity of an intrinsic semiconductor decreases. This is because, with the increase of temperature
- The carrier concentration increases but the mobility of carriers decreases.
- Both the carrier concentration and mobility of carriers decreases.
D. The carrier concentration remains the same but the mobility of carriers decreases.
ANSWER: A
ANSWER: A
- The extremely high input impedance of a MOSFET is Primarily because of
- Absence of its channel
- Depletion of current carriers
- Extremely small leakage current of its gate capacitor
- Negative VGS
A. duality
- The “Superposition theorem” is essentially based on the concept of
B. linearity
C. reciprocity
D. non-linearity
ANSWER: B
ANSWER: C
- Cells are connected in parallel in order to
- increase the voltage available.
- reduce cost of wiring.
- increase the current available.
- reduce the time required to fully charge them after use
ANSWER: B
- The power factor of a purely resistive circuit is
- zero.
- unity.
- lagging.
- leading.
ANSWER: C
- The power taken by a 3-phase load is given by the expression
- 3VL IL cos f .
- 3 VL IL sin f .
- 3 VL IL cos f .
- 3 VL IL sin f .
ANSWER: A
- Which of the following generating stations has the minimum running cost
- hydro-electric station.
- nuclear power station.
- thermal power station.
- diesel power plant.
ANSWER: B
- Which of the following motors has a high starting torque?
- ac series motor.
- dc series motor.
- induction motor.
- synchronous motor.
ANSWER: C
- The effect of increasing the length of the air gap in an induction motor will be to increase
- power factor.
- speed.
- magnetising current.
- air-gap flux.
ANSWER: A
- The combined resistance of two equal resistors connected in parallel is equal to
- One half the resistance of one resistor.
- Twice the resistance of one resistor.
- Four times the resistance of one resistor.
- One fourth the resistance of one resistor.
ANSWER: D
- Superposition theorem can be applicable only to circuits having _________ elements.
- Non- linear
- Passive
- Resistive
- Linear bilateral
ANSWER: C
- The Q- factor of a coil is given by
- Its power factor cosF .
- Ratio of max. energy stored & energy dissipated per cycle..
- Reciprocal of its power factor.
- Ratio R/Z.
ANSWER: C
- The efficiency of a transformer is maximum when
- It runs at half full load.
- It runs at full load.
- Its Cu loss equals iron loss.
- It runs overload.
ANSWER: D
- The unit of inductance is
- Ohm.
- Mho.
- Farad.
- Henry.
ANSWER: B
- Thevenin’s equivalent circuit consists of _________.
- Series combination of RTh, ETh and RL.
- Series combination of RTh, ETh.
- Parallel combination of RTh, ETh.
- Parallel combination of RTh, ETh and RL.
ANSWER: B
- An atom's atomic number is determined by the number of:
- neutrons minus protons
- protons
- electrons
- neutrons
be_________.
- In an R – L –C circuit, the phase of the current with respect to the circuit voltage will
ANSWER: D
- Leading.
- Same.
- Lagging.
- Depends upon the value of Land C.
ANSWER: B
- The negative and positive charge symbols are assigned (in that order) to the:
- proton and electron
- electron and proton
- atom and nucleus
- electron and element
ANSWER: C
- A voltmeter is used:
- to measure current
- in series with the circuit
- in parallel with the circuit
- to measure coulombs
ANSWER: B
- Q factor of an inductive coil is given by
- R/Z
- 2πfr/R
- 2πfL/R
- lr/l
kW and 3.5 kW respectively and the latter reading has been obtained after reversing the
- If the readings of the two wattmeters in the 2-wattmeter method of power measurement are 4.5
current coil of the wattmeter. What will be the total power in kW?ANSWER: A
- 1
- 3.5
- 4.5
- 8
ANSWER: D
- If the current in a circuit equals 0 A, it is likely that the
- voltage is too high
- resistance is too low
- circuit has a short
- circuit is open
ANSWER: D
- What are the unit and symbol for current
- Ampere, A
- Coulomb, I
- Ampere, Q
- Ampere, I
ANSWER: B
- A network that does not have either voltage or current sources is called
- Active network.
- Passive network.
- Resistive network.
- Dummy network.
ANSWER: B
- The Power- factor at resonance in R-L-C circuit is
- Zero.
- Unity.
- 0.5 lagging.
- 0.5 leading.
in ohms is
- Resistance of a wire is r ohms. The wire is stretched to double its length, then its resistance
ANSWER: B
- r/2
- 4r
- 2r
- r/4
ANSWER: B
- Which of the following will remain the same in all parts of a series circuit?
- Voltage
- Current
- Power
- Resistance
ANSWER: B
- Which one of the following statements is not true?
- Capacitance is a measure of a capacitor’s capability to store charge.
- A capacitor offers high impedance to ac but very low impedance to dc.
- A capacitor is also used as bypass capacitor.
- Capacitors are used to couple alternating voltages from one circuit to another and at the same time to block dc voltage from reaching the next circuit.
ANSWER: D
- In a Zener diode large reverse current is due to
- collision.
- presence of impurities.
- rupture of bonds
- lower resistance in reverse biased region.
ANSWER: D
- JFET has main drawback of
- having low input impedance.
- having high output impedance.
- being noisy.
- small gain-bandwidth product
ANSWER: B
- Which voltage source converts chemical energy to electrical energy?
- Electrical generator
- Battery
- Solar cell
- Electronic power supply
ANSWER: B
- One coulomb passing a point in one second is one:
- ampere
- volt
- ohm
- charge
ANSWER: C
- How many valence shell electrons are there in semiconductor atoms?
- 6
- 8
- 4
- 2
ANSWER: B
- For thermionic emission
- a material with high work function is preferable.
- a material with low work function is preferable.
- the work function of the material has no importance.
- None of these is true.
ANSWER: B
- Which unit of charge contains 6.25 × 1018 electrons?
- An ampere
- A coulomb
- A volt
- A joule
ANSWER: D
- A switch is a device that:
- short circuits complex circuits
- holds a fuse
- has double poles
- opens or completes a current path
ANSWER: B
- The CE configuration amplifier circuits are preferred over CB configuration amplifier circuits because they have
- Lower amplification factor.
- Larger amplification factor.
- high input resistance and low output resistance.
- none of these.
ANSWER: B
- Which electronics material opposes the movement of free electrons?
- Conductor
- Insulator
- Semiconductor
- Element
ANSWER: A
- Current is considered as the movement of:
- electrons
- protons
- charge
- nuclei
ANSWER: D
- The colour band sequence of a resistor is grey, Blue, gold, and gold. The range in which its value must lie so as to satisfy the tolerance specified is between
- 7.5Ω and 8.5Ω
- 3.12KΩ and 5.22KΩ
- 10.3KΩ and 12.31KΩ
- 8.17Ω and 9.03Ω
ANSWER: B
- In an N-type semiconductor, the concentration of minority carriers mainly depends upon
- the doping technique.
- the number of donor atoms.
- the temperature of the
- the quality of the intrinsic material,Ge or Si.
ANSWER: B
- A basic electric circuit is made up of what components?
- A load, a resistor, and a conductive path for current
- A voltage source, a load, and a conductive path for current
- A voltage source, a conductive path for current, and a battery
- A conductive path for current, a battery, and a copper wire
ANSWER: B
- A short circuit will have:
- a small current flow
- a large current flow
- no current flow
- some current flow
ANSWER: B
- Which of the following statements is true?
- Unlike charges repel and like charges attract.
- Like charges repel and unlike charges attract.
- Unlike charges attract and like charges attract.
- Like charges repel and unlike charges repel.
ANSWER: B
- When forward bias is applied to a junction diode, it
- increases the potential barrier.
- decreases the potential barrier.
- reduces the majority-carrier current to zero.
- reduces the minority-carrier current to zero.
ANSWER: D
- A UJT contains
- four pn junctions
- three pn junctions
- two pn junctions
- one pn junction
ANSWER: D
- Which of the following components are all active components?
- A resistor and a capacitor.
- A microphone, a LCD and a Thyratron.
- An electric bulb, a transformer and a varactor diode.
- An SCR, a vacuum diode and an LED.
ANSWER: B
- Doping materials are called impurities because they
- Decrease the number of charge carriers.
- Change the chemical properties of semiconductors.
- Make semiconductors less than 100 percent pure.
- Alter the crystal structures of the pure semiconductors
ANSWER: D
- Avalanche breakdown is primarily dependent on the phenomenon of
- Collision
- Doping
- Ionisation
- Recombination
ANSWER: C
- The main reason why electrons can tunnel through a P-N junction is that
- They have high energy.
- Barrier potential is very low.
- Depletion layer is extremely thin.
- Impurity level is low.
to be
- If a change in base current does not change the collector current, the transistor amplifier is said
ANSWER: A
- Saturated.
- Cut-off.
- Critical.
- Complemented.
ANSWER: A
- The extremely high input impedance of a MOSFET is primarily due to the
- Absence of its channel.
- Negative gate-source voltage.
- Depletion of current carriers.
- Extremely small leakage current of its gate capacitor.
ANSWER: A
- After firing an SCR, the gating pulse is removed. The current in the SCR will
- Remains the same.
- Immediately fall to zero.
- Rise up.
- Rise a little and then fall to zero.
ANSWER: C
- A device whose characteristics are very close to that of an ideal voltage source is
- a vaccum diode.
- a DIAC.
- a zener diode.
- a FET.
ANSWER: C
- The forbidden energy gap in semiconductors
- lies just below the valance band
- lies just above the conduction band
- lies between the valence band and the conduction band
- is the same as the valence band
ANSWER: B
- The barrier potential for a Ge PN junction is
- 0.6V.
- 0.3V.
- 0.1V.
- 0.5V.
is said to operate in
- In a BJT, if the emitter junction is reverse-biased and the collector junction is reverse-biased, it
ANSWER: C
- in active region
- in saturation region
- in cut-off region
- none of the above
ANSWER: B
- The resistance between bases of a UJT is typically in the range of
- 2 to 3 K Ω
- 5 to 10 K Ω
- 15 to 20 K Ω
- 18 to 20 K Ω
C. The carrier concentration decreases, but the mobility of carriers increases.
- With increasing temperature, the resistivity of an intrinsic semiconductor decreases. This is because, with the increase of temperature
- The carrier concentration increases but the mobility of carriers decreases.
- Both the carrier concentration and mobility of carriers decreases.
D. The carrier concentration remains the same but the mobility of carriers decreases.
ANSWER: A
ANSWER: A
- The extremely high input impedance of a MOSFET is Primarily because of
- Absence of its channel
- Depletion of current carriers
- Extremely small leakage current of its gate capacitor
- Negative VGS
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