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Thread: Metal-Semiconductor Junctions

  1. #1
    Fuchcha FaaDoO Engineer
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    Pdf 32 Metal-Semiconductor Junctions

    Chapter 17 V page 1Metal-Semiconductor Junctions
    This chapter concerns metal-semiconductor junctions. They are also called Schottky contacts to honor Walter Schottky, a pioneer in metal-semiconductor junctions.
    h Importance of metal-semiconductor junctions is due to
    1) Ohmic metal-semiconductor junctions (e.g. for metal interconnects contacting a Si device in an integrated circuit)
    2) Rectifying metal-semiconductor junctions = Schottky diodes (e.g. for high-speed rectifier diodes)
    h History:
    o Ferdinand Braun in the late 1800s experimented with metal-semiconductor contacts
    o Metal-semiconductor contact had importance as crystal detectors in radio receivers in the early 1900s. Advantages included:
    X Ease of fabrication
    X Deposition of a metal film on a semiconductor
    h Experiment: Removal of an electron from a hydrogen atom
    Illustration shows hydrogen atom core and electron
    Chapter 17 V page 2
    Illustration shows the removal of the electron:
    Work will be required to remove the electron to overcome coulombic attraction.
    Work that is required to remove one electron: W F r
    The work required is called the Rydberg energy: ERydberg = 13.6 eV
    The work required to remove an electron from a hydrogen atom is equal to the Rydberg
    h The Work Function and Einsteins photoemission experiments (Photoelectric Effect)
    Result of experiment:
    Chapter 17 V page 3
    Experimental finding: Ekin * h {em
    em = threshold energy required to remove one electron from a solid
    m = Work function
    dimension {m } = V
    o Example: Work function of some metals
    Aluminum, Al: m = 4.3 V
    Gold, Au: m = 4.8 V
    Recall: Band diagram for a metal
    Recall: Band diagram for a metal and a semiconductor
    Chapter 17 V page 4
    Schottky model for metal-semiconductor junctions
    h Schottky barrier
    o When a metal and a semiconductor get into contact a Schottky Barrier forms
    o The Schottky-barrier height is measured in eV
    o In the Schottky model, the Schottky-barrier height is equal to the difference of metal
    work function and semi-conductor electron affinity.
    o The illustration below shows the band diagram of a metal and a semiconductor
    before and after being brought into contact
    o Schottky-barrier height (Schottky model):
    eB * em { e s (1)
    B = Schottky barrier height
    Chapter 17 V page 5
    o Electrons transfer to metal (Driving force: Diffusion)
    o Electron transfer lasts until Fermi levels are equal on both sides of the junction
    o An electric field is generated
    o Depletion approximation: Layer of width WD is depleted of free carriers. Transition
    regions are abrupt.
    o VD= Diffusion potential
    eVD * eB { (EC { EF) (2)
    Recall: E E kT n N ( ) /
    e C F { { * (3)
    Chapter 17 V page 6
    Bardeen model for metal-semiconductor junctions
    h Bardeens model takes into account interface charges or interface states (Bardeen states)
    h Atomic model
    Due to different atomic structure and chemistry, electronic dipoles will form at the interface.
    Chapter 17 V page 7
    o Schottky-barrier height (Bardeen model):
    e B * e m { e s y e dipole (4)
    Comparison of the Bardeen model with the Schottky model reveals that the Bardeen
    model has one additional term. This term is due to the dipoles forming at the
    dipole cannot be easily calculated.
    EF is pinned near the middle
    of the forbidden gap for most
    metal-semiconductor junctions
    Chapter 17 V page 8
    Rectifying metal-semiconductor junctions
    o IV characteristic:
    (e 1) /
    * s { eV kT I I (5)
    Reverse saturation current:
    e kT I /
    e B { f (6)
    Chapter 17 V page 9
    o Depletion layer width (n-type semiconductor):
    ( )
    D V V
    e N
    W {

    * (7)
    o Maximum electrics field:
    ( )
    max V V
    e N

    E * (8)
    o Eqns. (7) and (8) can be derived by using Poissons equation, Gausss equation,
    and the depletion approximation
    o Band diagram:
    o There is no minority carrier injection in metal-semiconductor junctions (Schottky
    o There are no holes in the metal
    o Therefore, there is no diffusion capacitance
    o There is only a depletion capacitance
    o Due to the absence of the diffusion capacitance, Schottky diodes are inherently
    Chapter 17 V page 10
    Ohmic Contacts
    Ohmic contacts are highly doped Schottky contacts
    o Band Diagram:
    o Transport through barrier by tunneling
    o IV characteristics:

  2. #2
    Sr. FaaDoO Engineer tarun.pant's Avatar
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    Re: Metal-Semiconductor Junctions

    thank u for this very gud post

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