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Indium antimonide (InSb) shows great promise as an ultra-fast, very low power digital logic technology as it has the highest electron mobility and saturation velocity of any known semiconductor .
This performance can be accessed at room temperature using Extractive (minority carrier exclusion and extraction) technology, which mitigates the effect of the narrow band-gap on device leakage and breakdown. This was earlier demonstrated in a MOSFET device, using an InSb device layer on an InSb substrate with a deposited SiO 2 gate oxide .
In this paper, we report on the materials growth, device fabrication and characterization of an InSb channel Quantum well FET, which uses a semi-insulating GaAs substrate, a relaxed metamorphic buffer layer of AlyIn1-ySb to accommodate lattice mismatch, a compressively strained InSb quantum well confined between layers of AlxIn1-xSb and a Schottky barrier metal gate. Careful materials structure design employing a modulation doping scheme achieves 295K electron mobility of over 30,000 cm 2V- 1s-1 with a carrier density of over 1012 cm-2. Devices with gate length of 0.2 μm are fabricated and characterized, which demonstrate an fT of150 GHz at VDS = 0.5V.
Below is a detailed report attached for InSb Based Quantum Well TransistorSimilar Threads:
Last edited by surangma Parashar; 17th November 2011 at 11:00 AM.